epc3xx high sensitive photodiodes general description the epc3xx family products are high-sensitive photo diodes for light-barrier, light-curtain, and the like applications. these photo diodes are designed to be used in a reverse-bias mode. this device allows the design of short to long range light barriers from a few millimeters up to tens of meters. using chips from the epc3xx product line, linear or two dimen - sional arrays can be formed for any application, be it triangulation, spot location, angle measurement, rotary encoders, or similar. also, spectral sensitive detectors can e asi ly be designed by applying color filters in front of the photo diodes. also, other mechanical dimensions are available upon request. it is be possible to manufacture photo diodes of up to 15x15 mm or even bigger. such a 15x15 mm device then would contain 450 individual photo diodes, each of them individually accessible. all diodes feature a very high quantum efficiency of 90% in the near ir range, a reverse breakdown voltage of up to 30 volts and a response time down to less than 100ns. all devices are available upon request with optical bandpass filters. features ? low dark current ? high quantum efficiency ? high dynamic range ? diodes can be used in parallel ? csp package with very small footprint ? near infrared and visible version available ? customer specific wavelength filter upon request applications ? light barriers ranging from millimeters to tens of meters ? light curtains ? smoke detectors ? liquid detectors ? heart beat monitors ? position detection (rotary, linear, angle, etc.) ? ir remote control of hi-fi, tv sets and other equipment ? leveling instruments ? differential measurement ? linear photo diode arrays product range overview ? 2010 espros photonics ag www.espros.ch connection ? 2010 espros photonics ag www.espros.ch r connection connection ? 2010 espros photonics ag www.espros.ch r connection connection r connection connection ? 2010 espros photonics ag www.espros.ch r connection connection r connection connection r connection connection r connection connection r r r : refer to chapter e lectrical isolation between individual diodes model no. of photo diodes diode length (mm) diode width (mm) total active area (mm 2 ) typ. dark current at 20c (pa ) ideal bias voltage (v) wavelength (nm) footprint single diode 1 1.0 0.5 0.43 20 5 400 - 1050 --- epc300 2 1.0 1.0 0.86 40 5 400 - 1050 csp4 epc310 4 2.0 1.0 1.71 80 5 400 - 1050 csp8 epc320 8 2.0 2.0 3.42 160 5 400 - 1050 csp16 epc330 16 4.0 2.0 6.84 320 5 400 - 1050 csp32 type specific characteristics (all diodes of the array connected in parallel) ? 2011 espros photonics corporation characteristics subject to change without notice 1 datasheet epc3xx - v2.3 www.espros.ch
epc3xx absolute maximum ratings (notes 1, 2) recommended operating conditions reverse voltage v r breakdown voltage between diodes storage temperature range (t s ) lead temperature solder, 4 sec. (t l ) 30.0 v 10.0 v -40c to +85c +260c reverse voltage (v r ) operating temperature (t a ) relative humidity (non-condensing) min. 1.5 -40 +5 max. 20.0 +85 +95 units v c % note 1: absolute maximum ratings indicate limits beyond which damage to the device may occur. recommended operating conditions indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. for guaranteed specific - ations and test conditions, see electrical characteristics. note 2: this device is a highly sensitive cmos photodiodes with an esd rating of jedec hbm class 2 (<2kv). handling and assembly of this device should only be done at esd protected workstations. note 3: unless otherwise stated, measuring parameters are v r = 5.0 v, -40c < t a < +85c, r l = 50 note 4: unless otherwise stated, measurement data apply for individual photo diodes in multi diode chips general characteristics (notes 3, 4) symbol parameter conditions/comments values units min. typ. max. s max. wavelength max. sensitivity 850 nm wavelength range s = 20 % of s max 400 1030 nm s spectral sensitivity = 850nm, v r = 5v, i e = 1 mw/cm 2 , type epc300 0.6 a/w quantum efficiency = 850nm, v r = 5v, i e = 1 mw/c m 2 , t ype epc300 90 % half angle 60 v o open circuit voltage i e = 0.5 mw/cm 2 300 mv tc v temperature coefficient of i sc 0.38 %/k tc o temperature coefficient of v o -3.0 mv/k type specific characteristics @ +25c ( all diodes of the array connected in parallel ) symbol parameter conditions/comments values units min. typ. max. i p photo current per diode v r = 5v, i e = 1 mw/cm 2 , = 850 nm (nir filter centered on 850nm) 2.5 a epc300 5 epc310 10 epc320 20 epc330 40 i r dark current * per diode v r = 5 v, t a = 20c 20 250 pa epc300 40 500 epc310 80 1000 epc320 160 2000 epc330 320 4000 i sc short-circuit current per diode i e = 1 mw/cm 2 2.5 a epc300 5 epc310 10 epc320 20 epc330 40 * selected types available upon request ? 2011 espros photonics corporation characteristics subject to change without notice 2 datasheet epc3xx - v2.3 www.espros.ch
epc3xx symbol parameter conditions/comments values units min. typ. max. t r rise/fall time all types photo current measured at r l = 50 , = 850 nm, i p = 200 a ns v r = +1.5 v 300 v r = +5.0 v 150 v r = +10.0 v 90 c o capacitance per diode v r = +5v, ? = 100khz, e = 0 5 pf epc300 10 epc310 20 epc320 40 epc330 80 nep noise equivalent power per diode v r = 5 v 4.2x10 -15 w/hz epc300 6.0x10 -15 epc310 8.4x10 -15 epc320 1.2x10 -14 epc330 1.7x10 -14 c t cross talk suppression epc320 epc330 between individual photo diodes on the same chip, if the voltage difference v diff is <100mv between individual diodes (cathodes) 50 db ? 2011 espros photonics corporation characteristics subject to change without notice 3 datasheet epc3xx - v2.3 www.espros.ch
epc3xx connection diagrams epc300 epc310 anode 1 anode 2 cathode 1 cathode 2 1 top view 2 4 3 the structure of the diodes shown in the figure to the left is the same for all individual diodes on the chip also for the models epc310, epc320, and epc330. always two photo diodes are paired and have shorted anodes as shown in the figure. r: refer to chapter e lectrical isolation between individual diodes 8 7 1 2 anode 1 anode 2 cathode 4 top view 6 5 3 4 cathode 3 cathode 2 cathode 1 anode 3 anode 4 r epc320 16 15 9 10 anode 5 14 13 11 12 cathode 1 8 7 1 2 top view 6 5 3 4 cathode 2 cathode 3 cathode 4 cathode 5 cathode 6 cathode 7 cathode 8 anode 6 anode 7 anode 8 anode 1 anode 2 anode 3 anode 4 r r r r epc330 ? 2011 espros photonics corporation characteristics subject to change without notice 4 datasheet epc3xx - v2.3 www.espros.ch 32 31 17 18 anode 9 30 29 19 20 16 15 1 2 top view 14 13 3 4 cathode 1 cathode 2 cathode 3 cathode 4 anode 10 anode 11 anode 12 28 27 21 22 anode 13 26 25 23 24 12 11 5 6 10 9 7 8 cathode 5 cathode 6 cathode 7 cathode 8 anode 14 anode 15 anode 16 cathode 9 cathode 10 cathode 11 cathode 12 cathode 13 cathode 14 cathode 15 cathode 16 anode 1 anode 2 anode 3 anode 4 anode 5 anode 6 anode 7 anode 8 r r r r r r r r r r
epc3xx other parameters (typical values, t amb = 25c, v dd = 5.0v, i pd =0ma) 0 20 40 60 80 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 epc3x0 angle () r e l a t i v e s e n s i t i v i t y relative sensitivity vs. illumination angle 400 500 600 700 800 900 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 epc300/310/320/330 wavelength (nm) r e l a t i v e s e n s i t i v i t y relative spectral sensitivity -100 0 100 200 300 400 500 600 700 800 900 1000 1100 -70.00 -60.00 -50.00 -40.00 -30.00 -20.00 -10.00 0.00 10.00 photodiode 1 photodiode 2 position [m] c r o s s - t a l k [ d b ] cross-talk between a pair of photodiodes 1 e - 4 1 e - 3 1 e - 2 1 e - 1 1 e + 0 1 e + 1 1e-4 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 epc300 ie (mw/cm2) i p ( a ) photocurrent i p = ?(i e ), v r = 5 v, =850nm 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 500 epc30x ___ fall time ..... rise time 1 0 % - 9 0 % r i s e / f a l l t i m e [ n s ] reverse bias voltage [v] rise/ fall time versus reverse bias voltage ? 2011 espros photonics corporation characteristics subject to change without notice 5 datasheet epc3xx - v2.3 www.espros.ch
epc3xx application information light barrier application the following circuit uses an epc3xx photo diode with an epc13x pd amplifier chip. this circuit offers a very high ac photo current sensitivity and a tremendous dc backlight suppression. figure 1 : typical schematic circuit using an epc13x pd amplifier recommended components values r1: 27k (bias resistor). sensitivity can be reduced by the reduction of this resistor. c1: usually not needed. may be up to 100 pf (refer to the epc13x data sheet). c2: 33nf (dc input current filter capacitor) c3: 100nf or more (power supply filter capacitor) spectral sensitivity this photo diode contains an anti-reflection coating on the photosensitive surface. standard versions have no optical filter in order to allow ap - plications from the near uv to the near ir range. however, optical filters deposited on the photosensitive surface are available upon request. the filter parameters can be adjusted in a wide range according to specific customer requirements. electrical isolation between individual diodes the individual diodes are located on a monolithic silicon chip. thus, the electrical isolation between the individual diodes is not as good as with diodes on separate substrates. the substrate is conductive in x and y direction between all anodes, e.g. indicated in schematics by r. in x direction between the anode pairs ca. 20k is a typical value . they must not be used as resistor components. design rules on chip are the anodes metallic connect together by pairs. the user has to take care, that all anode pins are connected to the same voltage level (refer to above section). all pins of the diode array should be connected electrical-wise. the biasing of the cathodes can be individual.their voltage levels should be equal best match. ? 2011 espros photonics corporation characteristics subject to change without notice 6 datasheet epc3xx - v2.3 www.espros.ch c1 epc13x pd cn out vn vss vdd epc3xx c2 c3 5v r 1
epc3xx layout information (all measures in mm, m 1:1 din a4 part name part no. designed approved scale page t h i s d o c u m e n t i s c o n f i d e n t i a l a n d p r o t e c t e d b y l a w a n d i n t e r n a t i o n a l t r a d e s . i t m u s t n o t b e s h o w n t o a n y t h i r d p a r t y n o r b e c o p i e d i n a n y f o r m w i t h o u t o u r w r i t t e n p e r m i s s i o n . file: unbenannt 1 26.02.2009 ) package mechanical dimensions layout recommendations csp4 4 3 0.10 0.50 0 . 5 0 1.00 +0.00/-0.10 1 . 0 0 + 0 . 0 0 / - 0 . 1 0 solder balls sn97.5ag2.5 photo diode area photo diode area 0 . 0 5 0 . 2 6 0 . 0 4 photosensitive area m a x 0 . 1 0 max 0.10 0.14 1 2 top view bottom view 0 . 9 0 0.4 0 0.50 0 . 5 0 ? 0.3 0 1.00 1 . 0 0 no solder mask inside this area max. 0.1524 csp8 1 2 8 7 3 4 6 5 0 . 5 0 1.00 0.00/-0.10 2 . 0 0 0 . 0 0 / - 0 . 1 0 0 . 0 5 0 . 2 6 0 . 0 4 0 . 5 0 0 . 5 0 0.50 photosensitive area photo diode area photo diode area photo diode area photo diode area 0.14 solder balls sn97.5ag2.5 top view bottom view 0.50 0 . 5 0 ? 0.30 1.00 2 . 0 0 no solder mask inside this area 0 . 5 0 0 . 5 0 max. 0.1524 ? 2011 espros photonics corporation characteristics subject to change without notice 7 datasheet epc3xx - v2.3 www.espros.ch
epc3xx layout information (cont.) package mechanical dimensions csp16 0 . 5 0 0 . 1 0 2.00 +0.00/-0.10 2 . 0 0 + 0 . 0 0 / - 0 . 1 0 0 . 0 5 0 . 2 6 0 . 4 0 solder balls sn97.5ag2.5 0 . 5 0 0 . 5 0 photosensitive area 0.50 0.50 0.50 0.10 photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area max. 0.10 m a x . 0 . 1 0 0.14 top view bottom view 3 2 1 4 6 7 8 5 14 15 16 13 11 10 9 12 csp32 0 . 5 0 4.00 +0.00/-0.10 2 . 0 0 + 0 . 0 0 / - 0 . 1 0 0 . 0 5 0 . 2 6 0 . 0 4 solder balls sn97.5ag2.5 0 . 5 0 0 . 5 0 photosensitive area 0.50 0.50 0.50 0.50 0.50 0.50 0.50 photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area photo diode area 0.14 7 6 5 8 3 2 1 4 10 11 12 9 13 14 15 16 22 21 27 28 24 23 25 26 20 19 18 17 29 30 31 32 ? 2011 espros photonics corporation characteristics subject to change without notice 8 datasheet epc3xx - v2.3 www.espros.ch
epc3xx packaging information (all measures in mm) csp4 tape csp8 tape pin 1 8 1 2 4 pin 1 8 1 2 4 csp16 tape csp32 tape pin 1 8 1 2 4 pin 1 1 2 1 2 4 tape & reel information the devices are mounted on embossed tape for automatic placement systems. the tape is wound on 178 mm (7 inch) or 330 mm (13 inch) reels and individually packaged for shipment. g eneral tape-and-reel specification data are available in a separate data sheet and indicate the tape sizes for various package types. further tape-and-reel specifications can be found in the electronic industries association (eia) standard 481-1, 481-2, 481-3. epc does not guarantee non-empty cavities. thus, pick-and-place machines should check the presence of a chip during picking. it is highly recommended to use underfill after assembly of the chips to the pcb. ordering information part name package rohs compliance packaging method epc300-csp4 csp4 yes reel epc310-csp8 csp8 yes reel epc320-csp16 csp16 yes reel EPC330-CSP32 csp32 yes reel ? 2011 espros photonics corporation characteristics subject to change without notice 9 datasheet epc3xx - v2.3 www.espros.ch
epc3xx important notice espros photonics ag and its subsidiaries (epc) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. customers should obtain the latest relevant information before placing orders and should verify that such information is current and complete. all products are sold subject to epcs terms and conditions of sale supplied at the time of order acknowledgment. epc warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with epcs standard warranty. testing and other quality control techniques are used to the extent epc deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. epc assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using epc components. to minimize the risks associated with customer products and applications, customers should provide adequate design and operating safeguards. epc does not warrant or represent that any license, either express or implied, is granted under any epc patent right, copyright, mask work right, or other epc intellectual property right relating to any combination, machine, or process in which epc products or services are used. information published by epc regarding third-party products or services does not constitute a license from epc to use such products or services or a warranty or endorsement thereof. use of such information may require a license from a third party under the patents or other intellectual property of the third party, or a license from epc under the patents or other intellectual property of epc. resale of epc products or services with statements different from or beyond the parameters stated by epc for that product or service voids all express and any implied warranties for the associated epc product or service. epc is not responsible or liable for any such statements. epc products are not authorized for use in safety-critical applications (such as life support) where a failure of the epc product would reasonably be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing such use. buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of epc products in such safety-critical applications, notwithstanding any applications-related information or support that may be provided by epc. further, buyers must fully indemnify epc and its representatives against any damages arising out of the use of epc products in such safety- critical applications. epc products are neither designed nor intended for use in military/aerospace applications or environments unless the epc products are specifically designated by epc as military-grade or "enhanced plastic." only products designated by epc as military-grade meet military specifications. buyers acknowledge and agree that any such use of epc products which epc has not designated as military-grade is solely at the buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. epc products are neither designed nor intended for use in automotive applications or environments unless the specific epc products are desig - nated by epc as compliant with iso/ts 16949 requirements. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, epc will not be responsible for any failure to meet such requirements. ? 2011 espros photonics corporation characteristics subject to change without notice 10 datasheet epc3xx - v2.3 www.espros.ch
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